ANALYTICAL CHARACTERIZATION OF SNO2 THIN-FILMS

Thin (400 Å) films of SnO2 prepared by r.f. sputtering were studied by Auger elemental specroscopy and transmision microscopy. Room temperature resistivity measurements were also carried out on all films. The results show that the films were continuous but contained a large number of defects. Variations in grain size were also observed. The lowest resistivity was obtained for the films sputtered in pure oxygen. Auger studies of the films showed a uniform composition in the material extending from the surface to the bulk. The results should be of importance in the study of SnO2/semiconductor heterojunctions for solar cells. © 1979.