HEAT TREATMENT OF N-TYPE GAAS BY RADIANT ENERGY

被引:10
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KINSEL, TS
SEIDEL, TE
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10.1063/1.1702528
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O59 [应用物理学];
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页码:767 / &
相关论文
共 9 条
[1]   RADIATION-PRODUCED ENERGY LEVELS IN COMPOUND SEMICONDUCTORS [J].
AUKERMAN, LW .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1239-1243
[2]  
BAUM EJ, 1959, REV SCI INSTR, V30, P1064
[3]   PROPERTIES OF HIGH-RESISTIVITY GALLIUM ARSENIDE COMPENSATED WITH DIFFUSED COPPER [J].
BLANC, J ;
MACDONALD, HE ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (09) :1666-&
[4]   HEAT TREATMENT OF GALLIUM ARSENIDE [J].
EDMOND, JT .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1428-1430
[5]  
NICHOLLIAN EH, 1957, IBM J RESEARCH DEVEL, V1, P349
[6]   PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION [J].
ROSI, FD ;
MEYERHOFER, D ;
JENSEN, RV .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :1105-1108
[7]   PRECIPITATION OF COPPER IN GALLIUM ARSENIDE [J].
WHELAN, JM ;
FULLER, CS .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) :1507-1508
[8]   TRANSPORT PROPERTIES IN SILICON AND GALLIUM ARSENIDE [J].
WILLARDSON, RK .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1158-1165
[9]   THERMAL CONVERSION IN N-TYPE GAAS [J].
WYSOCKI, JJ .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1686-1686