THE DENSITY OF LOCALIZED STATES IN AMORPHOUS INXSE1-X THIN-FILMS

被引：18

作者：

NAITO, H

OKUDA, M

MATSUSHITA, T

NAKAU, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 09期

关键词：

D O I：

10.1143/JJAP.19.L513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L513 / L516

页数：4

共 9 条

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[4] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

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LECOMBER, PG ;

SPEAR, WE .

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[5] DETERMINATION OF DENSITY OF LOCALIZED STATES IN A-SE FILMS [J].

MEHRA, RM ;

KATHURIA, AK ;

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DAWAR, AL ;

MATHUR, PC .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (01) :K59-K62

[6] PHOTOVOLTAIC EFFECT OBSERVED ON CONSTRUCTION OF METAL-AMORPHOUS INXSE1-X THIN FILM-SNO2 SYSTEM [J].

NANG, TT ;

MATSUSHITA, T ;

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SUZUKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (02) :253-257

[7]

Okuda M., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P656

[8]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[9]

Sze S. M., 1969, PHYSICS SEMICONDUCTO, P643

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