INFLUENCE OF TEMPERATURE ON THE CRYSTAL HABIT OF SILICON IN THE SI-H-CL CVD SYSTEM .2. SURFACE-TENSION OF FACES IN THE (110) ZONES

被引：28

作者：

GARDENIERS, JGE

MAAS, WEJR

VANMEERTEN, RZC

GILING, LJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90643-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：832 / 842

页数：11

共 30 条

[1] SPIRAL GROWTH AND SURFACE ROUGHENING - DEVELOPMENTS SINCE BURTON, CABRERA AND FRANK [J].

BENNEMA, P .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (01) :182-197

[2]

BENNEMA P, 1987, MORPHOLOGY CRYSTALS, P1

[3] THE SI(111) 7X7 TO 1X1 TRANSITION [J].

BENNETT, PA ;

WEBB, MW .

SURFACE SCIENCE, 1981, 104 (01) :74-104

[4] SURFACE MORPHOLOGY OF EPITAXIAL SILICON [J].

BURMEISTER, J .

JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :131-+

[5] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1984, 29 (02) :785-792

[6]

Chernov A. A., 1976, Soviet Physics - Doklady, V21, P300

[7] THEORY OF TRANSITION FROM THE DIHYDRIDE TO THE MONOHYDRIDE PHASE ON THE SI(001) SURFACE [J].

CIRACI, S ;

BATRA, IP .

SURFACE SCIENCE, 1986, 178 (1-3) :80-89

[8] INFLUENCE OF TEMPERATURE ON THE CRYSTAL HABIT OF SILICON IN THE SI-H-CL CVD SYSTEM .1. EXPERIMENTAL RESULTS [J].

GARDENIERS, JGE ;

MAAS, WEJR ;

VANMEERTEN, RZC ;

GILING, LJ .

JOURNAL OF CRYSTAL GROWTH, 1989, 96 (04) :821-831

[9]

GARDENIERS JGE, IN PRESS

[10] ADSORPTION ON SI(111) DURING CVD OF SILICON FROM SILANE - THE EFFECT OF TEMPERATURE, BOND STRENGTH, SUPERSATURATION AND PRESSURE [J].

GILING, LJ ;

DEMOOR, HHC ;

JACOBS, WPJH ;

SAAMAN, AA .

JOURNAL OF CRYSTAL GROWTH, 1986, 78 (02) :303-321

← 1 2 3 →