INFLUENCE OF TEMPERATURE ON THE CRYSTAL HABIT OF SILICON IN THE SI-H-CL CVD SYSTEM .1. EXPERIMENTAL RESULTS

被引:34
作者
GARDENIERS, JGE
MAAS, WEJR
VANMEERTEN, RZC
GILING, LJ
机构
关键词
D O I
10.1016/0022-0248(89)90642-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:821 / 831
页数:11
相关论文
共 19 条
[1]  
BENNEMA P, 1987, MORPHOLOGY CRYSTALS, P1
[2]   EPITAXIAL-GROWTH OF SILICON BY CVD IN A HOT-WALL FURNACE [J].
BLOEM, J ;
OEI, YS ;
DEMOOR, HHC ;
HANSSEN, JHL ;
GILING, LJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) :1973-1980
[3]   CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J].
BRADBURY, DR ;
KAMINS, TI ;
TSAO, CW .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :519-523
[4]   STEP-FORMATION ENERGIES AND DOMAIN ORIENTATIONS AT SI(111) SURFACES [J].
CHADI, DJ ;
CHELIKOWSKY, JR .
PHYSICAL REVIEW B, 1981, 24 (08) :4892-4895
[5]   INFLUENCE OF TEMPERATURE ON THE CRYSTAL HABIT OF SILICON IN THE SI-H-CL CVD SYSTEM .2. SURFACE-TENSION OF FACES IN THE (110) ZONES [J].
GARDENIERS, JGE ;
MAAS, WEJR ;
VANMEERTEN, RZC ;
GILING, LJ .
JOURNAL OF CRYSTAL GROWTH, 1989, 96 (04) :832-842
[6]   ON THE INFLUENCE OF SURFACE RECONSTRUCTION ON CRYSTAL-GROWTH PROCESSES [J].
GILING, LJ ;
VANENCKEVORT, WJP .
SURFACE SCIENCE, 1985, 161 (2-3) :567-583
[7]   NON-UNIFORM DISTRIBUTION OF FACES IN A ZONE [J].
HARTMAN, P .
ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1965, 121 (01) :78-&
[8]  
Hollan L., 1972, Journal of Crystal Growth, V13-14, P319, DOI 10.1016/0022-0248(72)90177-7
[9]   CONTROLLED ETCHING OF SILICON IN THE HF-HNO3 SYSTEM [J].
KLEIN, DL ;
DSTEFAN, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) :37-42