OXYGEN SORPTION AND EXCITONIC EFFECTS ON GAAS SURFACES

被引：28

作者：

CHYE, PW ^{[1
]}

PIANETTA, P ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 919

页数：3

共 13 条

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[2] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110) [J].

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[3] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].

GUDAT, W ;

EASTMAN, DE .

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[4] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].

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ANDERSON, J .

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[5]

LUDEKE R, 1976, B AM PHYS SOC, V21, P937

[6] ELECTRONIC SURFACE STATES ON CLEAN AND OXYGEN-EXPOSED GAAS SURFACES [J].

LUDEKE, R ;

KOMA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :241-247

[7] DETERMINATION OF OXYGEN BINDING-SITE ON GAAS(110) USING SOFT-X-RAY-PHOTOEMISSION SPECTROSCOPY [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, C ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1975, 35 (20) :1356-1359

[8] OXIDATION PROPERTIES OF GAAS (110) SURFACES [J].

PIANETTA, P ;

LINDAU, I ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1166-1169

[9]

PIANETTA P, 1976, THESIS STANFORD U

[10]

PIANETTA P, TO BE PUBLISHED

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