REVERSIBLE ELECTRICAL-PROPERTIES OF LEC GAAS

被引：12

作者：

LOOK, DC

THEIS, WM

YU, PW

SIZELOVE, JR

FORD, W

MATHUR, G

机构：

[1] USAF,WRIGHT AERONAUT LABS,AADR,WRIGHT PATTERSON AFB,OH 45435

[2] HARRIS MICROWAVE SEMICOND,MILPITAS,CA 95035

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 01期

关键词：

D O I：

10.1007/BF02667792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：63 / 67

页数：5

共 22 条

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[8]

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[9] A DOMINANT ELECTRICAL DEFECT IN GAAS [J].

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WALTERS, DC ;

MEYER, JR .

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[10] MAGNETO-HALL AND MAGNETORESISTANCE COEFFICIENTS IN SEMICONDUCTORS WITH MIXED CONDUCTIVITY [J].

LOOK, DC .

PHYSICAL REVIEW B, 1982, 25 (04) :2920-2922

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