EFFECT OF GEOMETRY ON DOUBLE INJECTION IN SEMICONDUCTORS

被引：8

作者：

LEE, DH

BARON, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1971年 / 14卷 / 04期

关键词：

D O I：

10.1016/0038-1101(71)90072-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：295 / &

共 14 条

[1] EFFECTS OF DIFFUSION AND THERMAL GENERATION ON DOUBLE INJECTION IN SEMICONDUCTORS [J].

BARON, R .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1435-&

[2] TRANSIENT RESPONSE OF DOUBLE INJECTION IN A SEMICONDUCTOR OF FINITE CROSS SECTION [J].

BARON, R ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2614-&

[3]

BARON R, SEMICONDUCTORS SEMIM, V8

[4] TRANSIENT DOUBLE INJECTION IN TRAP-FREE SEMICONDUCTORS [J].

DEAN, RH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :585-&

[5]

DESHPANDE RY, 1965, SOLID STATE ELECTRON, V9, P265

[6]

DRIEDONKS F, 1968, 1968 P C PHYS ASP NO

[7] THEORY OF DOUBLE INJECTION INTO A SEMICONDUCTOR OF FINITE CROSS-SECTION [J].

HIROTA, R ;

TOSIMA, S ;

LAMPERT, MA .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (04) :535-&

[8] VOLUME-CONTROLLED, 2-CARRIER CURRENTS IN SOLIDS - INJECTED PLASMA CASE [J].

LAMPERT, MA ;

ROSE, A .

PHYSICAL REVIEW, 1961, 121 (01) :26-&

[9]

LAMPERT MA, 1959, RCA REV, V20, P682

[10] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY [J].

LEE, DH ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :182-&

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