ANALYSIS OF ARSENIC RANGE DISTRIBUTIONS IN SILICON

被引：19

作者：

SIGMON, TW

CHU, WK

MAYER, JW

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[2] CALTECH,PASADENA,CA 91109

来源：

APPLIED PHYSICS | 1975年 / 5卷 / 04期

关键词：

D O I：

10.1007/BF00928023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：347 / 350

页数：4

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[8] RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON [J].

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[9]

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[10] CHANNELING MEASUREMENTS IN AS-DOPED SI [J].

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