DIFFUSION PROPERTIES OF CADMIUM IN INDIUM-ANTIMONIDE

[1] BOLTAKS BI, 1963, SOV PHYS-SOL STATE, V5, P785

[2] JUNCTION DELINEATION BY ANODIC OXIDATION IN INSB (AS P) [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 539 - &

[3] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736

[4] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[5] KIM CK, 1974, THESIS STANFORD U

[6] MITCHELL AR, 1969, COMPUTATIONAL METHOD, P95

[7] TING CH, 1977, J ELCHEM SO, V118, P1454

[8] Tuck B., 1974, INTRO DIFFUSION SEMI

[9] MEASUREMENT OF ELECTRICAL IMPURITY PROFILE OF IMPLANTED IONS, USING PULSED MOS C-V TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 911 - 916

[10] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J]. PHYSICAL REVIEW, 1963, 131 (04): : 1548 - &

[1] BOLTAKS BI, 1963, SOV PHYS-SOL STATE, V5, P785

[2] JUNCTION DELINEATION BY ANODIC OXIDATION IN INSB (AS P) [J]. SOLID-STATE ELECTRONICS, 1967, 10 (06) : 539 - &

[3] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736

[4] KENDALL DL, 1968, SEMICONDUCT SEMIMET, V4, P163

[5] KIM CK, 1974, THESIS STANFORD U

[6] MITCHELL AR, 1969, COMPUTATIONAL METHOD, P95

[7] TING CH, 1977, J ELCHEM SO, V118, P1454

[8] Tuck B., 1974, INTRO DIFFUSION SEMI

[9] MEASUREMENT OF ELECTRICAL IMPURITY PROFILE OF IMPLANTED IONS, USING PULSED MOS C-V TECHNIQUE [J]. SOLID-STATE ELECTRONICS, 1975, 18 (11) : 911 - 916

[10] DIFFUSION WITH INTERSTITIAL-SUBSTITUTIONAL EQUILIBRIUM - ZINC IN GAAS [J]. PHYSICAL REVIEW, 1963, 131 (04): : 1548 - &