MEASUREMENT OF ELECTRICAL IMPURITY PROFILE OF IMPLANTED IONS, USING PULSED MOS C-V TECHNIQUE

被引：12

作者：

VERJANS, J ^{[1
]}

VANOVERSTRAETEN, RJ ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,LAB FYS & ELEKTR VANDEHALFGELEIDERS,KARDINAAL MER CIERLAAN 94,3030 HEVERLEE,BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 11期

关键词：

D O I：

10.1016/0038-1101(75)90104-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：911 / 916

页数：6

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