IMPROVEMENT OF HARDNESS OF MOS CAPACITORS TO ELECTRON-BEAM IRRADIATION AND HOT-ELECTRON INJECTION BY ULTRA-DRY OXIDATION OF SILICON

被引：15

作者：

HARUTA, R ^{[1
]}

OHJI, Y ^{[1
]}

NISHIOKA, Y ^{[1
]}

YOSHIDA, I ^{[1
]}

MUKAI, K ^{[1
]}

SUGANO, T ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT ELECT ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 01期

关键词：

D O I：

10.1109/55.31671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 29

页数：3

共 10 条

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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2524 - 2533
[5] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466
[6] OXIDE THICKNESS DEPENDENCE OF ELECTRON-INDUCED SURFACE STATES IN MOS STRUCTURES
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[J]. APPLIED PHYSICS LETTERS, 1975, 27 (11) : 615 - 617
[7] ELECTRON AND HOLE TRAPS IN SIO2-FILMS THERMALLY GROWN ON SI SUBSTRATES IN ULTRA-DRY OXYGEN
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2245 - 2252
[8] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
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BERGLUND, CN
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ANDREWS, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &
[9] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES
NICOLLIAN, EH
BERGLUND, CN
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +
[10] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

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