INFLUENCE OF CHAMBER PRESSURE ON HYDROGEN-BONDING CONFIGURATIONS IN A-SIGE-H FILMS PREPARED BY PHOTO-CVD

被引：3

作者：

DE, A

GANGULY, G

RAY, S

BARUA, AK

机构：

[1] Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

A-SIGE-H; PHOTO-CVD; LOW CHAMBER PRESSURE; GROWTH PROCESS; HYDROGEN BONDING STRUCTURE;

D O I：

10.1143/JJAP.29.2365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon-germanium (a-SiGe:H) thin films have been deposited by the process of mercury sensitized photo-CVD method from a mixture of silane and germane gases. The growth processes of a-Si:H and a-Ge:H films have been studied at different chamber pressures and from these data optimum pressures for the deposition of a-SiGe:H films have been selected. The variations of the electrical and structural properties of these films with optical band gap have been studied with films deposited at different chamber pressures. The properties of a-SiGe:H films have been found to be better at lower chamber pressure and the data is interpretated on the basis of changes in hydrogen bonding configuration with pressure.

引用

收藏

页码：2365 / 2370

页数：6

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