GROWTH AND CHARACTERIZATION OF GERMANIUM AND BORON DOPED SILICON EPITAXIAL-FILMS

被引:4
作者
ANG, SS
GARVIN, JF
机构
关键词
D O I
10.1007/BF02652231
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:39 / 43
页数:5
相关论文
共 7 条
[1]  
BELLAVANCE DW, 1983, ELECTROCHEM SOC M, V83, P653
[3]   X-RAY-INVESTIGATION OF BORON-DOPED AND GERMANIUM-DOPED SILICON EPITAXIAL LAYERS [J].
HERZOG, HJ ;
CSEPREGI, L ;
SEIDEL, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2969-2974
[4]  
LUI J, 1985, IEEE T ELECTRON DEVI, V32, P2533
[5]  
Prussin S., 1961, J APPL PHYS, V32, P1876, DOI [10.1063/1.1728256, DOI 10.1063/1.1728256]
[6]   PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].
SMITH, CS .
PHYSICAL REVIEW, 1954, 94 (01) :42-49
[7]   STRESS-ENHANCED CARRIER MOBILITY IN ZONE-MELTING RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO-2-COATED SUBSTRATES [J].
TSAUR, BY ;
FAN, JCC ;
GEIS, MW .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :322-324