INDIUM DOPING OF CDTE LAYERS AND CDTE/CD1-XZNXTE MICROSTRUCTURES

被引：13

作者：

BASSANI, F

SAMINADAYAR, K

TATARENKO, S

KHENG, K

COX, RT

MAGNEA, N

GRATTEPAIN, C

机构：

[1] UNIV J FOURIER,CNRS,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

[2] CNRS,LAB PHYS SOLIDES BELLEVUE,F-92195 MEUDON,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90781-D

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Doping of CdTe and Cd1-xZnxTe layers and heterostructures with indium donors during their growth by MBE is described. Characterization by SIMS, electrical measurements and photoluminescence is presented with emphasis on: activation efficiency for uniform and planar doping; degree of localization achieved for step-like doping profiles; doped single and multiple quantum wells. Compensation by acceptor impurities and by intrinsic defects occurs at low (almost-equal-to 10(16) cm-3) and at high (> 10(18) cm-3) In concentrations, respectively. Essentially 100% activation efficiency of the donors is achieved in the intermediate range.

引用

页码：391 / 395

页数：5

共 10 条

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