THE POSSIBLE INFLUENCE OF THE FREE CARRIER REDISTRIBUTION WITHIN THE CONDUCTION-BAND ON THE THERMAL-EXPANSION BEHAVIOR IN TE DOPED GAAS

被引:2
作者
BAKMISIUK, J
KUHNEL, G
SIEGEL, W
PIETSCH, U
机构
[1] BERGAKAD FREIBERG,SEKT PHYS,O-9200 FREIBERG,GERMANY
[2] KARL MARX UNIV,SEKT PHYS,O-7010 LEIPZIG,GERMANY
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 158卷 / 02期
关键词
D O I
10.1002/pssb.2221580240
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
[No abstract available]
引用
收藏
页码:K111 / K114
页数:4
相关论文
共 12 条
[1]   TEMPERATURE-DEPENDENCE OF THE LATTICE-CONSTANT IN DOPED AND NONSTOICHIOMETRIC GAAS, GAAS1-CHIP-CHI, AND GAP [J].
BAKMISIUK, J ;
BRUHL, HG ;
PASZKOWICZ, W ;
PIETSCH, U .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02) :451-457
[2]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[3]   ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE .
PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194
[4]   REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].
HURLE, DTJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :613-626
[5]   ELECTRONIC EFFECT ON DEBYE TEMPERATURE OF N-TYPE SILICON [J].
KEYES, RW ;
KOBAYASHI, N .
SOLID STATE COMMUNICATIONS, 1978, 27 (02) :63-64
[6]   LATTICE SUPERDILATION PHENOMENA IN DOPED GAAS [J].
MULLIN, JB ;
STRAUGHAN, BW ;
DRISCOLL, CMH ;
WILLOUGHBY, AFW .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2584-2587
[7]  
NICOLS KH, 1980, SOLID STATE ELECTRON, V23, P109
[8]  
NOVIKOVA SI, 1964, FIZ TVERD TELA+, V3, P129
[9]   THE INFLUENCE OF FREE-CARRIERS ON THE EQUILIBRIUM LATTICE-PARAMETER OF SEMICONDUCTOR-MATERIALS [J].
PIETSCH, U ;
UNGER, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01) :165-172
[10]  
PIETSCH U, 1985, 7TH P INT SCH DEF CR, P36