WARM ELECTRON EFFECTS IN GAAS AT LOW TEMPERATURES

[1] AKASAKI I, 1968, 9TH P INT C PHYS SEM, P787

[2] Brooks H., 1955, ADV ELECTRONICS ELEC, V7, P87

[3] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[4] TEMPERATURE DEPENDENCE OF MICROWAVE DIELECTRIC CONSTANT OF GAAS LATTICE [J]. APPLIED PHYSICS LETTERS, 1968, 12 (07) : 231 - &

[5] CHYNOWETH A G., 1968, SEMICONDUCTORS SEMIM, V4, P263

[6] CONWELL EM, 1967, SOLID STATE PHYSICS, V2

[7] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : 67 - &

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498): : 1147 - &

[10] ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1962, 127 (04): : 1045 - &

[1] AKASAKI I, 1968, 9TH P INT C PHYS SEM, P787

[2] Brooks H., 1955, ADV ELECTRONICS ELEC, V7, P87

[3] GUNN EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1967, 30 : 97 - +

[4] TEMPERATURE DEPENDENCE OF MICROWAVE DIELECTRIC CONSTANT OF GAAS LATTICE [J]. APPLIED PHYSICS LETTERS, 1968, 12 (07) : 231 - &

[5] CHYNOWETH A G., 1968, SEMICONDUCTORS SEMIM, V4, P263

[6] CONWELL EM, 1967, SOLID STATE PHYSICS, V2

[7] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GALLIUM ARSENIDE [J]. PHYSICA STATUS SOLIDI, 1966, 17 (01): : 67 - &

[8] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[9] DETERMINATION OF EFFECTIVE IONIC CHARGE OF GALLIUM ARSENIDE FROM DIRECT MEASUREMENTS OF DIELECTRIC CONSTANT [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (498): : 1147 - &

[10] ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE [J]. PHYSICAL REVIEW, 1962, 127 (04): : 1045 - &