AN ELS AND AES STUDY OF INP(100) SURFACES DURING SB ATOM CONDENSATION

被引：8

作者：

GRUZZA, B

PARISET, C

ABDELLAOUI, S

机构：

[1] Laboratoire de Physique des Milieux Condensés, URA CNRS 796, Université Blaise Pascal-Clermont-Fd II, Aubiere

来源：

SURFACE AND INTERFACE ANALYSIS | 1990年 / 16卷 / 1-12期

关键词：

D O I：

10.1002/sia.740160114

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Auger electron spectroscopy (AES) and electron loss spectroscopy (ELS) have been performed in order to investigate InP (100) surfaces subjected to a controlled Sb deposition. The combination of these two electron spectroscopies and a fine analysis of AES signals as a function of surface coverage allows us to propose a model for the formation of Sb/InP interfaces. Indium droplets present on the sample after Ar+cleaning disappear during the first Sb deposit to form an InSb surface compound, which gives the surface great stability. If the deposit is formed at a high temperature after this first stage, no more Sb atoms can be condensed, whereas at room temperature the growth mode is of the Franck Van Der Merwe type. Copyright © 1990 John Wiley & Sons Ltd.

引用

页码：54 / 58

页数：5

共 8 条

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[2] ABDELLAOUI S, 1989, THESIS B PASCAL U
[3] ACHARD B, 1985, SURF SCI, V160, pLS19
[4] BENKACEM M, 1988, VIDE, V43, P245
[5] AUGER STUDIES OF TEMPERATURE EFFECT ON THE INP-AG INTERFACE - CONTRIBUTION OF A THIN SB INTERLAYER
DUMAS, M
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BENKACEM, M
LASSABATERE, L
[J]. SURFACE SCIENCE, 1989, 211 (1-3) : 698 - 706
[6] GRUZZA B, 1987, THESIS B PASCAL U
[7] AN AES AND ELS STUDY OF INP (100) SURFACE SUBJECTED TO ARGON ION-BOMBARDMENT
JARDIN, C
ROBERT, D
ACHARD, B
GRUZZA, B
PARISET, C
[J]. SURFACE AND INTERFACE ANALYSIS, 1987, 10 (06) : 301 - 305
[8] Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103

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