ELECTRONIC-STRUCTURE OF GE AND DIAMOND SCHOTTKY BARRIERS

被引：15

作者：

IHM, J ^{[1
]}

LOUIE, SG ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.18.4172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4172 / 4180

页数：9

共 32 条

[1]

BARDEEN J, 1947, PHYS RV, V71, P727

[2] RANDOM-PHASE-APPROXIMATION DIELECTRIC FUNCTION FOR DIAMOND, WITH LOCAL FIELD EFFECTS INCLUDED [J].

BRENER, NE .

PHYSICAL REVIEW B, 1975, 12 (04) :1487-1492

[3] COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :245-248

[4] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[5] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[6] ONE-ELECTRON PROPERTIES OF METAL-SEMICONDUCTOR JUNCTION FOR ZINCBLENDE COMPOUNDS [J].

FLORES, F ;

LOUIS, E ;

YNDURAIN, F .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (24) :L465-L469

[7]

FLORES F, UNPUBLISHED

[8] ELECTRONEGATIVITIES OF THE ELEMENTS [J].

GORDY, W ;

THOMAS, WJO .

JOURNAL OF CHEMICAL PHYSICS, 1956, 24 (02) :439-444

[9] NEW METHOD OF DETERMINATION OF A METAL-SEMICONDUCTOR BARRIER HEIGHT [J].

GUINET, C .

APPLIED PHYSICS LETTERS, 1974, 25 (10) :600-602

[10] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

← 1 2 3 4 →