SUBSTRATE-QUALITY, SINGLE-CRYSTAL ZNSE FOR HOMOEPITAXY USING SEEDED PHYSICAL VAPOR TRANSPORT

被引：19

作者：

COTAL, HL ^{[1
]}

MARKEY, BG ^{[1
]}

MCKEEVER, SWS ^{[1
]}

CANTWELL, G ^{[1
]}

HARSCH, WC ^{[1
]}

机构：

[1] EAGLE PICHER RES LABS,MIAMI,OK

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-4526(93)90222-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We describe the results of optical and electrical characterization of seeded physical vapor transport (SPVT) ZnSe suitable for use as substrates in homoepitaxy. Photoluminescence, Hall measurements, C-V data and thermally simulated conductivity and luminescence (TSC/TL) results are described. As-grown SPVT wafers are of very high crystallinity and of high resistivity. N-type conductivity can be induced by post-growth Zn-extraction, producing wafers with room temperature resistivities as low as 3.82 OMEGA cm and free carrier densities of approximately 1.5 x 10(15) cm-3. The conductivity is limited by the presence of unwanted acceptors due to Cu and Li impurities. Deep level analysis reveals various electron and hole states within the as-grown specimens. Trap depths and capture cross-sections are evaluated for the major centers.

引用

页码：103 / 108

页数：6

共 18 条

[11] BRIDGMAN GROWTH OF ZNSE CRYSTALS WITH A PBN CRUCIBLE SEALED IN A MOLYBDENUM CAPSULE
OMINO, A
SUZUKI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 80 - 84
[12] PROPERTIES OF ZNSE-ZNSE0.9TE0.1 AND ZNSE-ZN0.9CD0.1SE MULTILAYERS
REN, J
BOWERS, KA
VAUDO, RP
COOK, JW
SCHETZINA, JF
DING, J
JEON, H
NURMIKKO, AV
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 510 - 514
[13] DETERMINATION OF DEEP LEVELS IN SEMI-INSULATING CADMIUM TELLURIDE BY THERMALLY STIMULATED CURRENT MEASUREMENTS
SCHARAGER, C
MULLER, JC
STUCK, R
SIFFERT, P
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 31 (01): : 247 - 253
[14] SCHETZINA JF, 1991, 5TH INT C 2 6 COMP O
[15] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS
STRINGFELLOW, GB
BUBE, RH
[J]. PHYSICAL REVIEW, 1968, 171 (03): : 903 - +
[16] INVESTIGATION OF DEEP LEVELS IN HEAT-TREATED ZNSE CRYSTALS BY ODLTS TECHNIQUE
WANG, SY
FAN, XW
[J]. JOURNAL OF LUMINESCENCE, 1988, 40-1 : 802 - 803
[17] HIGH-RESOLUTION AND CONVENTIONAL TRANSMISSION ELECTRON-MICROSCOPY IN THE CHARACTERIZATION OF THIN-FILMS AND INTERFACES INVOLVING II-VI-MATERIALS
WILLIAMS, JO
WRIGHT, AC
YATES, HM
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 441 - 453
[18] UNDOPED ZNSE SINGLE-CRYSTAL GROWTH BY THE VERTICAL BRIDGMAN METHOD
YOSHIDA, H
FUJII, T
KAMATA, A
NAKATA, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 75 - 79

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