GAAS QUANTUM-WELL DISTRIBUTED BRAGG REFLECTION LASER WITH ALGAAS/GAAS SUPERLATTICE GRATINGS FABRICATED BY FOCUSED ION-BEAM MIXING

被引：10

作者：

STECKL, AJ ^{[1
]}

CHEN, P ^{[1
]}

CAO, XL ^{[1
]}

JACKSON, HE ^{[1
]}

KUMAR, M ^{[1
]}

BOYD, JT ^{[1
]}

机构：

[1] UNIV CINCINNATI, DEPT PHYS, CINCINNATI, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The operation of a GaAs laser structure with twin distributed Bragg reflection gratings fabricated by impurity-induced reordering with a single-step focused ion beam maskless implantation is reported here. Multiple mode laser emission has been observed at approx.827 nm, with emission linewidths of approx.1.5 angstrom. Future improvements in laser characteristics are anticipated with this technique by optimizing the laser design and the focus ion beam (FIB) implantation parameters.

引用

收藏

页码：179 / 181

页数：3

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