CHEMICAL TREND IN SILICIDE ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER HEIGHTS OF SILICIDE-SILICON INTERFACES

被引：14

作者：

HARA, S

OHDOMARI, I

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7554

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7554 / 7557

页数：4

共 32 条

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