EXCITONIC ABSORPTION IN INGAP GAAS MULTIQUANTUM WELLS

被引：2

作者：

PATRIZI, GA ^{[1
]}

LEE, HY ^{[1
]}

HAFICH, MJ ^{[1
]}

SILVESTRE, P ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiquantum well pin photodiodes have been fabricated using InGaP/GaAs grown by gas-source MBE. The room temperature photocurrent spectrum of the diodes exhibits strong excitonic absorption at wavelengths near 860 nm, and a large change in the photocurrent is observed with applied bias.

引用

页码：2363 / 2364

页数：2

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