CORELESS DEFECTS AND THE CONTINUITY OF EPITAXIAL NISI2/SI(100) THIN-FILMS

被引：26

作者：

BATSTONE, JL ^{[1
]}

GIBSON, JM ^{[1
]}

TUNG, RT ^{[1
]}

LEVI, AFJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1063/1.99297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 830

页数：3

共 15 条

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ANSTIS, GR
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SPENCE, JCH
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862
[3] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE
CHERNS, D
HETHERINGTON, CJD
HUMPHREYS, CJ
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01): : 165 - 177
[4] CHERNS D, 1984, MATER RES SOC S P, V25, P423
[5] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901
[6] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION
GIBSON, JM
BATSTONE, JL
TUNG, RT
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 45 - 47
[7] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI
HAUENSTEIN, RJ
SCHLESINGER, TE
MCGILL, TC
HUNT, BD
SCHOWALTER, LJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 853 - 855
[8] LEVI AFJ, 1987, MATER RES SOC S P, V77, P271
[9] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111)
LIEHR, M
SCHMID, PE
LEGOUES, FK
HO, PS
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142
[10] POND RC, 1986, MATER RES SOC S P, V56, P3