LASER-INDUCED CVD OF GOLD USING NEW PRECURSORS

被引:27
作者
MESSELHAUSER, J
FLINT, EB
SUHR, H
机构
[1] Institute of Organic Chemistry, University of Tübingen, D-7400 Tübingen
关键词
D O I
10.1016/0169-4332(92)90019-T
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The volatile compounds Me3AuPR3 (R = Me, Et) and MeAuPMe3 (Me: methyl, Et: ethyl) are used for depositing highly pure gold lines on glass substrates. The resistivity of the lines is in general close to that of bulk gold and rather independent of the evaporator temperature. The stripe geometries vary with laser power, writing speed and evaporator temperature. Stripe heights vary between 0.1 and 1-mu-m and stripe widths are between 40 and 160-mu-m. With Me3AuPMe3 deposition is possible near room temperature.
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收藏
页码:64 / 68
页数:5
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