A SCANNING ELECTRON-BEAM-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS - COMMENTS

被引：1

作者：

DONOLATO, C

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/16.214756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An asymptotic analysis of beam-induced-current profiles of grain boundaries in polycrystalline solar cells presented previously is corrected and extended to the case of arbitrary interface recombination velocity.

引用

页码：1190 / 1191

页数：2

共 7 条

[1]

[Anonymous], 1996, TABLES INTEGRALS SER

[2]

Bender Carl, 1999, ADV MATH METHODS SCI, V1

[3] A SCANNING-ELECTRON-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS [J].

DIMITRIADIS, CA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1761-1765

[4]

DONOLATO C, 1978, OPTIK, V52, P19

[5] THEORY OF BEAM INDUCED CURRENT CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SOLAR-CELLS [J].

DONOLATO, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1314-1322

[6] LIGHT-BEAM-INDUCED CURRENT CHARACTERIZATION OF GRAIN-BOUNDARIES [J].

MAREK, J .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :318-326

[7] DEMONSTRATION OF EXCITATION-DEPENDENT GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON [J].

SUNDARESAN, R ;

FOSSUM, JG ;

BURK, DE .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :964-970

← 1 →