2ND-HARMONIC RESPONSE OF CHEMICALLY-MODIFIED VICINAL SI(111) SURFACES

被引：21

作者：

EMMERICHS, U

MEYER, C

BAKKER, HJ

KURZ, H

BJORKMAN, CH

SHEARON, CE

MAO, Y

YASUDA, T

JING, Z

LUCOVSKY, G

WHITTEN, JL

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

[2] N CAROLINA STATE UNIV,DEPT CHEM,RALEIGH,NC 27695

[3] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

[4] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.50.5506

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the optical second-harmonic (SH) response of vicinal Si(111) interfaces, H-terminated or covered with a thermally grown oxide film and subjected to different annealing temperatures. We observed that the rotational anisotropy of the SH signal of a thermally grown oxide film changes after an annealing procedure. We explain this result from a modification of atomic bonding at the steps of the surface. The change in amplitude and phase of the nonlinear-optical response can be well described with an anharmonic oscillator model. We found that the nonlinear-optical signal can be correlated with the electrical quality (density of interface traps) of metal-oxide semiconductor devices produced from these Si/SiO2 structures.

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页码：5506 / 5511

页数：6

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