LOW-FREQUENCY FLUCTUATIONS OF A GAAS DIODE IN RELAXATION REGIME

被引:4
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STOISIEK, M
WOLF, D
QUEISSER, HJ
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10.1063/1.1653897
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O59 [应用物理学];
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页码:228 / &
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[1]   INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS [J].
HAISTY, RW ;
HOYT, PL .
SOLID-STATE ELECTRONICS, 1967, 10 (08) :795-&
[2]   THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J].
MANY, A ;
RAKAVY, G .
PHYSICAL REVIEW, 1962, 126 (06) :1980-&
[3]   ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].
NORTHROP, DC ;
THORNTON, PR ;
TREZISE, KE .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :17-&
[4]   CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J].
QUEISSER, HJ ;
CASEY, HC ;
VANROOSB.W .
PHYSICAL REVIEW LETTERS, 1971, 26 (10) :551-&
[5]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P30
[6]   CURRENT-CARRIER TRANSPORT WITH SPACE CHARGE IN SEMICONDUCTORS [J].
VANROOSBROECK, W .
PHYSICAL REVIEW, 1961, 123 (02) :474-&
[7]  
VANROOSBROECK W, 1970, 10 P INT C PHYS SEM, P832