FEMTOSECOND CARRIER DYNAMICS IN THE PRESENCE OF A COLD-PLASMA IN GAAS AND ALGAAS

被引：8

作者：

ACIOLI, LH

ULMAN, M

VALLEE, F

FUJIMOTO, JG

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

[3] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[4] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.109951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The femtosecond dynamics of hot carriers interacting with a cold high density electron-hole plasma are investigated in GaAs and Al0.2Ga0.8As. Studies are performed using a three pulse pump-probe technique where a cold plasma is first generated by a femtosecond pulse, then pump-probe transmission measurements are performed after a few hundred picoseconds delay. The results indicate only a small increase of the hot carrier thermalization rate even for plasma densities as high as 10(18) cm-3.

引用

收藏

页码：666 / 668

页数：3

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