HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE

被引：15

作者：

UCHIHASHI, T ^{[1
]}

OKUSAKO, T ^{[1
]}

SUGAWARA, Y ^{[1
]}

YAMANISHI, Y ^{[1
]}

OASA, T ^{[1
]}

MORITA, S ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD,ADV TECHNOL RES LABS,AMAGASAKI,HYOGO 660,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 8A期

关键词：

SILICON OXIDE; STABLE STATE; SURFACE DIFFUSION; HEAT TREATMENT; STEAMING; WATER LAYER; ELECTRIFIED CHARGES; CONTACT ELECTRIFICATION; ATOMIC FORCE MICROSCOPE;

D O I：

10.1143/JJAP.33.L1128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated heat treatment and steaming effects of silicon oxide upon the surface dissipation of contact-electrified electrons. As a result, we found that the surface diffusion of densely contact-electrified electrons on the silicon oxide surface becomes. slower due to the removal of the adsorbed water layer on a silicon oxide layer by means of heat treatment, while it is enhanced by the steamed water layer. From the heat treatment and steaming effects upon the dissipation process, we concluded that the stable state of densely contact-electrified electrons becomes more stable upon removal of the water layer.

引用

页码：L1128 / L1130

页数：3

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