LOW-TEMPERATURE HOMO-EPITAXY AND HETEROEPITAXY OF SAPPHIRE FILMS BY REACTIVE IONIZED CLUSTER BEAM DEPOSITION

被引：11

作者：

HIRAYAMA, H ^{[1
]}

TAKAOKA, GH ^{[1
]}

USUI, H ^{[1
]}

YAMADA, I ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,MET & CERAM LAB,KAWASAKI 210,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95206-S

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The epitaxial growth of sapphire films on sapphire substrates and single crystalline Al film substrates is reported. The films were grown by Al deposition in O2 atmosphere. O2 gas was introduced in the chamber through a variable leak valve to 2 x 10(-4) Torr. Depositions were made at the acceleration voltages of 1-5 kV and substrate temperatures of 200-600-degrees-C. The typical deposition rate was 2 nm/min. The crystalline state could be controlled by changing the acceleration voltage. High quality epitaxial films on sapphire substrates were obtained at 5 kV and 400-degrees-C. The refractive index was 1.763. In the case of the deposition on an Al film surface, the (0001) plane of the grown film was parallel to the (111) plane of the Al film. The highest index, 1.763, was obtained on the 200-degrees-C substrate. This is almost equal to that of a sapphire crystal. The microhardness was also evaluated.

引用

页码：207 / 210

页数：4

共 7 条

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