FILM AND INTERFACE PROPERTIES OF EPITAXIAL METAL-INSULATOR SEMICONDUCTOR SYSTEMS FORMED BY IONIZED CLUSTER BEAM DEPOSITION

被引：11

作者：

YAMADA, I ^{[1
]}

USUI, H ^{[1
]}

INOKAWA, H ^{[1
]}

TAKAGI, T ^{[1
]}

机构：

[1] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,KYOTO 606,JAPAN

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90866-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：365 / 375

页数：11

共 9 条

[1] OBSERVATION OF INITIAL-STAGE OF AL EPITAXIAL-GROWTH ON SI(111) BY IONIZED CLUSTER BEAM DEPOSITION
INOKAWA, H
YAMADA, I
TAKAGI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (03): : L173 - L174
[2] ELECTRICAL EFFECT ON SCHOTTKY-BARRIER DIODES OF SI CRYSTALLIZATION FROM AL-SI METAL-FILMS
REITH, TM
SCHICK, JD
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (09) : 524 - 526
[3] EVALUATION OF METAL AND SEMICONDUCTOR-FILMS FORMED BY IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
YAMADA, I
SASAKI, A
[J]. THIN SOLID FILMS, 1976, 39 (DEC) : 207 - 217
[4] ION-SURFACE INTERACTIONS DURING THIN-FILM DEPOSITION
TAKAGI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 382 - 388
[5] AL METALLIZATION BY IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY
YAMADA, I
INOKAWA, H
FUKUSHIMA, K
TAKAGI, T
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 900 - 905
[6] VAPORIZED-METAL CLUSTER FORMATION AND EFFECT OF KINETIC-ENERGY OF IONIZED CLUSTERS ON FILM FORMATION
YAMADA, I
TAKAOKA, H
INOKAWA, H
USUI, H
CHENG, SC
TAKAGI, T
[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 137 - 146
[7] ALUMINUM EPITAXY ON SI(111) AND SI(100) USING AN IONIZED CLUSTER BEAM
YAMADA, I
INOKAWA, H
TAKAGI, T
[J]. THIN SOLID FILMS, 1985, 124 (3-4) : 179 - 184
[8] Yamada I., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1177
[9] EPITAXIAL-GROWTH OF AL ON SI(111) AND SI(100) BY IONIZED-CLUSTER BEAM
YAMADA, I
INOKAWA, H
TAKAGI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2746 - 2750

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