INTRINSIC AND EXTRINSIC CHARGE NEUTRALITY LEVELS IN SEMICONDUCTORS - AN EMPIRICAL-APPROACH

被引：15

作者：

GOZZO, F ^{[1
]}

COLUZZA, C ^{[1
]}

MARGARITONDO, G ^{[1
]}

FLORES, F ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,FAC CIENCIAS,DEPT FIS MAT CONDENSADA C-XII,E-28049 MADRID,SPAIN

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 07期

关键词：

D O I：

10.1016/0038-1098(92)90410-B

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We discuss an empirical method to estimate the positions of intrinsic charge neutrality levels of semiconductors. The method, based on the relation between intrinsic and extrinsic charge neutrality levels, has been applied to Si, Ge, GaAs, GaP and InP.

引用

页码：553 / 556

页数：4

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