NATURE OF THE SCHOTTKY TERM IN THE SCHOTTKY-BARRIER

被引：27

作者：

CHANG, Y ^{[1
]}

HWU, Y ^{[1
]}

HANSEN, J ^{[1
]}

ZANINI, F ^{[1
]}

MARGARITONDO, G ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.63.1845

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1845 / 1848

页数：4

共 33 条

[1] NEAR-IDEAL SCHOTTKY-BARRIER FORMATION AT METAL-GAP INTERFACES [J].

BRILLSON, LJ ;

VITURRO, RE ;

SLADE, ML ;

CHIARADIA, P ;

KILDAY, D ;

KELLY, MK ;

MARGARITONDO, G .

APPLIED PHYSICS LETTERS, 1987, 50 (19) :1379-1381

[2]

BRILLSON LJ, 1988, CHEM PHYSICS SOLID S, V5

[3]

BRILLSON LJ, 1987, HDB SYNCHROTRON RAD, V2, P541

[4]

BRILLSON LJ, 1984, P BROOKHAVEN C ADV S, P89

[5] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[6] THE OTHER SIDE OF THE SCHOTTKY-BARRIER FORMATION PROCESS - SI 3X3 OVERLAYERS ON AL(111) [J].

CHANG, Y ;

COLAVITA, E ;

TACHE, N ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (03) :1971-1972

[7]

CHANG Y, IN PRESS J VAC SCI T

[8] OBSERVATION AND STRUCTURAL DETERMINATION OF (SQUARE-ROOT-3 X SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTION OF THE SI(111) SURFACE [J].

FAN, WC ;

IGNATIEV, A ;

HUANG, H ;

TONG, SY .

PHYSICAL REVIEW LETTERS, 1989, 62 (13) :1516-1519

[9] ON THE FORMATION OF SEMICONDUCTOR INTERFACES [J].

FLORES, F ;

TEJEDOR, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (02) :145-175

[10] CHEMICAL BONDING AT THE SI-METAL INTERFACE - SI-NI AND SI-CR [J].

FRANCIOSI, A ;

WEAVER, JH ;

ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :624-627

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