STABLE GERMANIUM DIOXIDE FILMS ON GERMANIUM

被引：10

作者：

KUISL, M

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 05期

关键词：

D O I：

10.1016/0038-1101(72)90161-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：595 / &

共 10 条

[1]

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[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

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[3]

FLASCHEN SS, 1961, J ELECTROCHEM SOC, V108, pC62

[4] INVESTIGATION OF DOUBLE LAYERS IN SEMICONDUCTOR TECHNOLOGY [J].

FRANZ, I ;

LANGHEINRICH, W .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :807-+

[5]

FRANZ I, 1964, TELEFUNKENZEITUNG, V37, P194

[6] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&

[7]

KUISL M, 1970, Z ANGEW PHYSIK, V28, P342

[8] RATES OF OXIDATION OF GERMANIUM [J].

LAW, JT ;

MEIGS, PS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (03) :154-159

[9] THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN [J].

LIGENZA, JR ;

SPITZER, WG .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 14 :131-136

[10] INFRARED STUDIES ON POLYMORPHS OF SILICON DIOXIDE AND GERMANIUM DIOXIDE [J].

LIPPINCOTT, ER ;

VANVALKENBURG, A ;

WEIR, CE ;

BUNTING, EN .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1958, 61 (01) :61-70

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