EFFECT OF ION-IMPLANTATION DOPING ON ELECTRICAL-PROPERTIES OF YTTRIA-STABILIZED ZIRCONIA THIN-FILMS

被引：15

作者：

VANHASSEL, BA

BURGGRAAF, AJ

机构：

[1] Laboratory for Inorganic Chemistry, Materials Science and Catalysis, Department of Chemical Technology, 7500 AE Enschede

来源：

SOLID STATE IONICS | 1992年 / 57卷 / 3-4期

关键词：

D O I：

10.1016/0167-2738(92)90148-I

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The change in conductivity of Fe and Ti implanted rf-sputtered layers of yttria-stabilized zirconia (YSZ) was studied as a function of the temperature (400-800-degrees-C) and oxygen partial pressure. In an oxidized state and in the temperature range of 400-600-degrees-C, the conductivity of the Fe implanted YSZ film (15 keV, 8 x 10(16) at.cm-2) was dominated by the n-type electronic conductivity of a thin Fe2O3 layer with an estimated thickness of less than 2 nm on top of the YSZ thin film. Due to the incorporation of a part of the implanted Fe atoms in the yttria-stabilized zirconia lattice, the ionic conductivity was somewhat decreased. In a reducing atmosphere this electronic conduction was no longer observed. In an oxidized state, the conductivity of the YSZ film was not influenced by the implantation of Ti (15 keV, 8 x 10(16) at.cm-2). After reduction in a H2 atmosphere, an increase in the conductivity of the sputtered film with 2-3 orders of magnitude was observed. This has been ascribed to the presence of nonstoichiometric TiO2-x, which is an n-type semiconductor.

引用

页码：193 / 201

页数：9

共 29 条

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