SURFACE OXIDE CHEMISTRY OF HG-0.8CD-0.2TE

被引：3

作者：

LOPES, VC

HART, TR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.574098

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：174 / 178

页数：5

共 30 条

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[8] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE [J].

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[9] COMPOSITION STUDY OF PHOTOCHEMICALLY GROWN OXIDES OF HG1-XCDXTE [J].

DAVIS, GD ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :670-671

[10] THE COMPOSITION OF ANODIC OXIDE-FILMS ON HG0.8CD0.2TE [J].

FARROW, RFC ;

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