KU-BAND HIGH-EFFICIENCY HIGH-GAIN PSEUDOMORPHIC HEMT

被引：3

作者：

SMITH, PM

KOPP, WF

HO, P

CHAO, PC

SMITH, RP

NORDHEDEN, K

BALLINGALL, JM

机构：

[1] Electronics Laboratory, General Electric Company, Syracuse

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

TRANSISTORS; MICROWAVE DEVICES;

D O I：

10.1049/el:19910172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 0.25-mu-m gate length, 1600-mu-m gate width, double-heterojunction pseudomorphic HEMT with moderate output power and record power gain and efficiency is reported. At 15 GHz, output power is 575 mW with 12 dB gain and 50% power-added efficiency.

引用

页码：270 / 271

页数：2

共 7 条

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SMITH P, 1987, IEDM, P854

[5] A 0.25-MU-M GATE-LENGTH PSEUDOMORPHIC HFET WITH 32-MW OUTPUT POWER AT 94-GHZ [J].

SMITH, PM ;

LESTER, LF ;

CHAO, PC ;

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SMITH, RP ;

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KAO, MY .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :437-439

[6]

SMITH PM, 1989, MTT S, P983

[7]

WANG ML, 1990, MTT S, P997

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