MATERIALS CHARACTERISTICS OF PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES WITH INXGA1-XAS SINGLE QUANTUM-WELL AND GAAS-INXGA1-XAS (0.25-LESS-THAN-X-LESS-THAN-0.4) THIN STRAINED SUPERLATTICE ACTIVE LAYERS

Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with InxGa1-xAs single quantum well and GaAs(h 1)In x Ga1-x As(h 2) thin strained superlattice active layers where 0.25≤x ≤ 0.4. All of the samples were grown by molecular beam epitaxy. Hall effect at 77 K, photoluminescence at 2 K, in-situ reflection high energy electron diffraction, and transmission electron microscopy measurements are discussed. Critical layer thickness measurements are compared with the Matthews-Blakeslee theory. Photoluminescence transition energies are compared with a self-consistent solution to Schrodinger's and Poisson's equations. © 1990 The Mineral,Metal & Materials Society,Inc.