RED PHOTOLUMINESCENT EFFICIENCY AND MINORITY-CARRIER LIFETIME OF GAP(ZN,O) PULLED FROM NONSTOICHIOMETRIC MELTS

被引：20

作者：

JORDAN, AS

NEIDA, ARV

CARUSO, R

DIDOMENICO, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 10期

关键词：

D O I：

10.1063/1.1653744

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：394 / +

页数：1

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共 13 条

[1] MEASUREMENT OF FREE-CARRIER LIFETIMES IN GAP BY PHOTOINDUCED MODULATION OF INFRARED ABSORPTION
AFROMOWITZ, MA
DIDOMENICO, M
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3205 - +
[2] CARUSO R, TO BE PUBLISHED
[3] LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O)
DISHMAN, JM
DIDOMENI.M
CARUSO, R
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1988 - +
[4] RADIATIVE AND NONRADIATIVE RECOMBINATION AT NEUTRAL OXYGEN IN P TYPE GAP
DISHMAN, JM
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2588 - +
[5] HIGH-EFFICIENCY RED-EMITTING GAP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (ETA APPROXIMATELY 6 PERCENT) AND CZOCHRALSKI (ETA APPROXIMATELY 2 PERCENT) SUBSTRATES
HACKETT, WH
SAUL, RH
VERLEUR, HW
BASS, SJ
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (12) : 477 - &
[6] JORDAN AK, UNPUBLISHED
[7] SOLID SOLUBILITY ISOTHERMS OF ZN IN GAP AND GAAS
JORDAN, AS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 781 - &
[8] P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C
LOGAN, RA
WHITE, HG
TRUMBORE, FA
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (07) : 206 - &
[9] NEIDA ARV, TO BE PUBLISHED
[10] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING
NYGREN, SF
RINGEL, CM
VERLEUR, HW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 306 - &