DEPENDENCE OF EMISSION SPECTRUM AND EFFICIENCY OF GAASSI DIODES ON SILICON CONCENTRATION

被引：8

作者：

AHN, BH

SHURTZ, RR

TRUSSELL, CW

机构：

来源：

关键词：

D O I：

10.1149/1.2408184

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1015 / &

共 7 条

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HAWRYLO, FZ .

[4] INFRARED ILLUMINATORS OF GALLIUM ARSENIDE WITH HIGH EFFICIENCY [J].

LINDEN, KJ .

INFRARED PHYSICS, 1970, 10 (03) :141-&

[5]

NELSON H, 1963, RCA REV, V24, P103

SPITZER, WG ;

PANISHI, MB .

[7]

STURGE MD, 1962, PHYS REV, V127, P168