EVIDENCE FOR GRAIN-BOUNDARY PASSIVATION BY OXIDATION IN POLYCRYSTALLINE GAAS SOLAR-CELLS

被引:10
作者
KAZMERSKI, LL
IRELAND, PJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期
关键词
D O I
10.1116/1.570500
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:525 / 528
页数:4
相关论文
共 14 条
[11]   GRAIN-BOUNDARY EDGE PASSIVATION OF GAAS FILMS BY SELECTIVE ANODIZATION [J].
PANDE, KP ;
HSU, YS ;
BORREGO, JM ;
GHANDHI, SK .
APPLIED PHYSICS LETTERS, 1978, 33 (08) :717-719
[12]   ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J].
SEAGER, CH ;
CASTNER, TG .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3879-3889
[13]   TECHNOLOGY OF GAAS METAL-OXIDE-SEMICONDUCTOR SOLAR-CELLS [J].
STIRN, RJ ;
YEH, YCM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) :476-483
[14]   SOLAR-CELLS ON LARGE-GRAIN GAAS THIN-FILMS [J].
VERNON, SM ;
BLAKESLEE, AE ;
HOVEL, HJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :703-704