FUNDAMENTALS OF INFRARED DETECTORS

被引：33

作者：

PETRITZ, RL

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1959年 / 47卷 / 09期

关键词：

D O I：

10.1109/JRPROC.1959.287036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1458 / 1467

页数：10

共 47 条

[1] RECOMBINATION IN SEMICONDUCTORS
BEMSKI, G
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004
[2] BRECKENRIDGE RG, 1956, PHOTOCONDUCTIVITY C
[3] BURSTEIN E, 1958, FEB IRIS
[4] BURSTEIN E, OPTICAL PHOTOCONDUCT, P353
[5] FILM-TYPE INFRARED PHOTOCONDUCTORS
CASHMAN, RJ
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (09): : 1471 - 1475
[6] DEWAARD R, 1959, P IRE, V47, P1508
[7] FAN HY, 1954, PHYS REV, V93, P1434, DOI 10.1103/PhysRev.93.1434.7
[8] EFFECT OF TRAPS ON CARRIER INJECTION IN SEMICONDUCTORS
FAN, HY
[J]. PHYSICAL REVIEW, 1953, 92 (06): : 1424 - 1428
[9] PHOTOSENSITIZATION OF PBS FILMS
HARADA, RH
MINDEN, HT
[J]. PHYSICAL REVIEW, 1956, 102 (05): : 1258 - 1262
[10] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON
HORNBECK, JA
HAYNES, JR
[J]. PHYSICAL REVIEW, 1955, 97 (02): : 311 - 321