ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODES

被引：49

作者：

LIVINGSTONE, AW ^{[1
]}

TURVEY, K ^{[1
]}

ALLEN, JW ^{[1
]}

机构：

[1] UNIV ST ANDREWS, SCH PHYS SCI, WOLFSON INST LUMINESC, ST ANDREWS, SCOTLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 03期

关键词：

D O I：

10.1016/0038-1101(73)90009-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：351 / 356

页数：6

共 10 条

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[6] TUNNEL-INJECTION ELECTROLUMINESCENCE [J].

FISCHER, AG ;

MOSS, HI .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :2112-&

[7]

FISCHER AG, 1964, RADIATIVE RECOMBINAT, P259

[8] EDGE AND SELF-ACTIVATED EMISSIONS IN ZINC SELENIDE [J].

IIDA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (01) :177-&

[9] INJECTION ELECTROLUMINESCENCE IN CDS BY TUNNELING FILMS [J].

JAKLEVIC, RC ;

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VASSELL, WC .

APPLIED PHYSICS LETTERS, 1963, 2 (01) :7-9

[10] SURFACE BARRIERS ON ZNSE AND ZNO [J].

MEAD, CA .

PHYSICS LETTERS, 1965, 18 (03) :218-&

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