CONTAMINATION EFFECTS FROM TELLURIUM IN ZNS-ZNSE SUPERLATTICES

被引：2

作者：

BOUCHARA, D ^{[1
]}

ABOUNADI, A ^{[1
]}

DIBLASIO, M ^{[1
]}

BRIOT, N ^{[1
]}

CLOITRE, T ^{[1
]}

BRIOT, O ^{[1
]}

GIL, B ^{[1
]}

CALAS, J ^{[1
]}

AVEROUS, M ^{[1
]}

AULOMBARD, RL ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,CASE COURRIER 074,F-34095 MONTPELLIER 5,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90791-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the temperature dependence of the photoluminescence of tellurium-doped ZnS-ZnSe superlattices. By comparing the reflectivity and photoluminescence data, we were able to identify both free exciton recombination and self-trapped exciton band energy split by 90 meV. The behaviour of the photoluminescence with temperature results from trapping versus detrapping effects which are ruled by an activation energy of 80 meV. This behaviour is analysed in the context of a configuration coordinate diagram.

引用

页码：121 / 126

页数：6

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