OPTICAL ANALYSIS OF METALORGANIC VAPOR-PHASE EPITAXY GROWN ZNS/ZNSE/GAAS(100) HETEROSTRUCTURES - CARRIER DIFFUSION AND INTERFACE SHARPNESS

被引：5

作者：

HERMANS, J ^{[1
]}

WAGNER, V ^{[1
]}

GEURTS, J ^{[1
]}

WOITOK, J ^{[1
]}

SOLLNER, J ^{[1
]}

HEUKEN, M ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metalorganic vapor phase epitaxy grown epitaxial layers of ZnS and ZnSe on GaAs(100) are investigated by Raman spectroscopy, far-infrared reflectance spectroscopy, and x-ray diffractometry. This combination allows a separate determination of crystalline quality, stress, and free carrier concentration. Furthermore, the interface sharpness can be deduced. While for optimized growth conditions the interfaces are sharp within less than 1 nm, we observe the presence of free carriers in nominally undoped epilayers. They are interpreted in terms of a diffusion of Ga atoms from the substrate into the epilayer. It is shown, that the concentration can be drastically reduced by a decrease of the growth temperature. Concentrations below 10(16) cm-3 are achieved for growth at 640 K

引用

页码：2062 / 2065

页数：4

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