SOLUTION GROWTH OF CUINSE2 FROM CUSE SOLUTIONS

被引：10

作者：

MIYAKE, H

OHTAKE, H

SUGIYAMA, K

机构：

[1] Department of Electrical and Electronic Engineering, Mie University, Tsu, Mie

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 156卷 / 04期

关键词：

D O I：

10.1016/0022-0248(95)00280-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The phase relation of the CuInSe2-CuSe pseudobinary system has been investigated. The solids in equilibrium with the liquids at temperatures above 630 degrees C are single-phase CuInSe2 with chalcopyrite structure, but those at temperatures below 630 degrees C are composed of two phases of CuInSe2 and Cu2-xSe. On the basis of the results, solution growth of CuInSe2 crystals is performed at similar to 780 degrees C using the Bridgman technique. The obtained crystals are of p-type conductivity, and the photoluminescence spectra exhibit a band-edge emission peaking at 1.04 eV.

引用

页码：404 / 409

页数：6

共 16 条

[11] THM GROWTH AND PROPERTIES OF CUINSE2 SINGLE-CRYSTALS [J].