NEW EPITAXIAL RELATIONSHIPS IN THE DEPOSITION OF CDS ONTO CDTE

被引：11

作者：

AWAN, GR

BRINKMAN, AW

RUSSELL, GJ

WOODS, J

机构：

[1] Univ of Durham, Durham, Engl, Univ of Durham, Durham, Engl

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 85卷 / 03期

关键词：

D O I：

10.1016/0022-0248(87)90480-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：477 / 482

页数：6

共 19 条

[1]

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[2]

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APPLIED PHYSICS LETTERS, 1986, 48 (19) :1273-1275

[4] HIGH-EFFICIENCY ELECTROPLATED HETEROJUNCTION SOLAR-CELL [J].

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[5] GROWTH OF (100) CDTE-FILMS OF HIGH STRUCTURAL PERFECTION ON (100) GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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KAWAYOSHI, H .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :313-315

[6] DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BROWN, PD ;

HAILS, JE ;

RUSSELL, GJ ;

WOODS, J .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1144-1145

[7]

BROWN PD, 1987, IN PRESS I PHYS C SE

[8] THIN-FILM CDTE SOLAR-CELLS [J].

COHENSOLAL, C ;

BARBE, M ;

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NEU, G .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :512-524

[9]

CULLIS AG, 1985, I PHYS C SER, V76, P29

[10] THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES [J].

GIESS, J ;

GOUGH, JS ;

IRVINE, SJC ;

BLACKMORE, GW ;

MULLIN, JB ;

ROYLE, A .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :120-125

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