HIGH-POWER HIGH-RELIABILITY OPERATION OF 1.3-MU-M P-SUBSTRATE BURIED CRESCENT LASER-DIODES

被引：5

作者：

NAKAJIMA, Y ^{[1
]}

HIGUCHI, H ^{[1
]}

KOKUBO, Y ^{[1
]}

SAKAKIBARA, Y ^{[1
]}

KAKIMOTO, S ^{[1
]}

NAMIZAKI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP,KITAITAMI WORKS,ITAMI,HYOGO 664,JAPAN

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1987年 / 5卷 / 09期

关键词：

D O I：

10.1109/JLT.1987.1075632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1263 / 1268

页数：6

共 12 条

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[2] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

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[4] HIGH-POWER OUTPUT, LOW THRESHOLD, INNER STRIPE GAINASP LASER DIODE ON A P-TYPE INP SUBSTRATE [J].

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[5]

ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310

[6]

MITO I, 1985, NEC RES DEV, P14

[7]

MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195

[8] 1.3-MU-M BURIED-HETEROSTRUCTURE LASERS ON P-TYPE INP SUBSTRATES [J].

NAKANO, Y ;

NOGUCHI, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :452-457

[9]

NAKANO Y, 1981, ELECTRON LETT, V17, P782, DOI 10.1049/el:19810548

[10] INGAASP/INP BURIED CRESCENT LASER DIODE EMITTING AT 1.3 MU-M WAVELENGTH [J].

OOMURA, E ;

HIGUCHI, H ;

SAKAKIBARA, Y ;

HIRANO, R ;

NAMIZAKI, H ;

SUSAKI, W ;

IKEDA, K ;

FUJIKAWA, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (08) :866-874

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