SUPPRESSION OF THE EMITTER SIZE EFFECT ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR BY UTILIZING (NH4)2SX TREATMENT

被引：18

作者：

SHIKATA, S

OKADA, H

HAYASHI, H

机构：

[1] Optoelectronics Laboratories, Sumitomo Electric Industries Ltd., Sakae-ku, Yokohama 244

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The (NH4)2S(x) surface treatment was applied to the AlGaAs/GaAs heterojunction bipolar transistor. The suppression of the emitter size effect on the current gain was observed for up to 4 X 4-mu-m2 emitter size devices, and 2.5 times high current gain was obtained with the improvement of the ideality factor. These results indicate that the surface recombination at emitter-base junction area are largely reduced by this treatment. The (NH4)2S(x) treatment also proved to be applicable to the conventional device fabrication processes and highly reliable for the heat treatment.

引用

页码：2717 / 2718

页数：2

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